| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 109A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 9880pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Rds On (Max) @ Id, Vgs | 19 mOhm @ 50A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SP1 |
| Package / Case | SP1 |
MOSFET N-CH 200V 109A SP1 - N-Channel 200V 109A (Tc) 480W (Tc) Chassis Mount SP1
Transistors APTML20UM18R010T1AG
The manager will inform you of the total cost including delivery.