| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 570nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 657W (Tc) |
| Rds On (Max) @ Id, Vgs | 216 mOhm @ 33A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SP1 |
| Package / Case | SP1 |
MOSFET N-CH 1000V 40A SP1 - N-Channel 1000V 40A (Tc) 657W (Tc) Chassis Mount SP1
Transistors APTM100DA18CT1G
The manager will inform you of the total cost including delivery.