| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 155A |
| Current - Collector Pulsed (Icm) | 225A |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 75A |
| Power - Max | 536W |
| Switching Energy | 2500µJ (on), 2140µJ (off) |
| Input Type | Standard |
| Gate Charge | 485nC |
| Td (on/off) @ 25°C | 47ns/385ns |
| Test Condition | 400V, 75A, 1 Ohm, 15V |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | - |
IGBT 600V 155A 536W TO264 - IGBT 600V 155A 536W Through Hole
IGBT Transistors APT75GN60B2DQ3G
The manager will inform you of the total cost including delivery.