| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Tube |
| Part Status | Not For New Designs |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 200A |
| Current - Collector Pulsed (Icm) | 225A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Power - Max | 833W |
| Switching Energy | 8045µJ (on), 7640µJ (off) |
| Input Type | Standard |
| Gate Charge | 425nC |
| Td (on/off) @ 25°C | 60ns/620ns |
| Test Condition | 800V, 75A, 1 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
IGBT 1200V 200A 833W TMAX - IGBT Trench Field Stop 1200V 200A 833W Through Hole
IGBT Transistors APT75GN120B2G
| MOQ | Price |
|---|---|
| 1 | 15.60 € |
The manager will inform you of the total cost including delivery.