| Manufacturer | Microsemi Corporation |
| Series | * |
| Packaging | Bulk |
| Part Status | Obsolete |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 134A |
| Current - Collector Pulsed (Icm) | 260A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 70A |
| Power - Max | 595W |
| Gate Charge | 305nC |
| Td (on/off) @ 25°C | 19ns/170ns |
| Test Condition | 433V, 70A, 4.3 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | T-MAX™ [B2] |
INSULATED GATE BIPOLAR TRANSISTO - IGBT NPT 650V 134A 595W Through Hole T-MAX™ [B2]
IGBT Transistors APT70GR65B2SCD30
The manager will inform you of the total cost including delivery.