| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 121A |
| Current - Collector Pulsed (Icm) | 202A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Power - Max | 520W |
| Switching Energy | 715µJ (on), 607µJ (off) |
| Input Type | Standard |
| Gate Charge | 198nC |
| Td (on/off) @ 25°C | 21ns/133ns |
| Test Condition | 400V, 40A, 4.7 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
IGBT 600V 121A 520W TO-247 - IGBT PT 600V 121A 520W Through Hole
IGBT Transistors APT68GA60B2D40
| MOQ | Price |
|---|---|
| 1 | 11.32 € |
The manager will inform you of the total cost including delivery.