| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 117A |
| Current - Collector Pulsed (Icm) | 193A |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 38A |
| Power - Max | 500W |
| Switching Energy | 1192µJ (on), 1088µJ (off) |
| Input Type | Standard |
| Gate Charge | 162nC |
| Td (on/off) @ 25°C | 18ns/131ns |
| Test Condition | 600V, 38A, 4.7 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | TO-264 [L] |
IGBT 900V 117A 500W TO-264 - IGBT PT 900V 117A 500W Through Hole TO-264 [L]
IGBT Transistors APT64GA90LD30
| MOQ | Price |
|---|---|
| 1 | 11.98 € |
The manager will inform you of the total cost including delivery.