| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 117A |
| Current - Collector Pulsed (Icm) | 193A |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 38A |
| Power - Max | 500W |
| Switching Energy | 1192µJ (on), 1088µJ (off) |
| Input Type | Standard |
| Gate Charge | 162nC |
| Td (on/off) @ 25°C | 18ns/131ns |
| Test Condition | 600V, 38A, 4.7 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
IGBT 900V 117A 500W TO-247 - IGBT PT 900V 117A 500W Through Hole
IGBT Transistors APT64GA90B2D30
| MOQ | Price |
|---|---|
| 1 | 14.49 € |
| 10 | 13.18 € |
| 25 | 12.19 € |
| 100 | 11.20 € |
| 250 | 10.21 € |
| 500 | 9.55 € |
The manager will inform you of the total cost including delivery.