| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Tube |
| Part Status | Preliminary |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 340nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 13500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 42A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | ISOTOP® |
| Package / Case | SOT-227-4, miniBLOC |
MOSFET N-CH 500V 58A ISOTOP - N-Channel 500V 58A (Tc) 540W (Tc) Chassis Mount ISOTOP®
Transistors APT58MJ50J
The manager will inform you of the total cost including delivery.