| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 96A |
| Current - Collector Pulsed (Icm) | 161A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 32A |
| Power - Max | 416W |
| Switching Energy | 534µJ (on), 466µJ (off) |
| Input Type | Standard |
| Gate Charge | 158nC |
| Td (on/off) @ 25°C | 17ns/112ns |
| Test Condition | 400V, 32A, 4.7 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
IGBT 600V 96A 416W TO-247 - IGBT PT 600V 96A 416W Through Hole TO-247 [B]
IGBT Transistors APT54GA60B
| MOQ | Price |
|---|---|
| 1 | 7.08 € |
The manager will inform you of the total cost including delivery.