| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Packaging | Tube |
| Part Status | Not For New Designs |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 150A |
| Current - Collector Pulsed (Icm) | 190A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Power - Max | 625W |
| Switching Energy | 465µJ (on), 635µJ (off) |
| Input Type | Standard |
| Gate Charge | 165nC |
| Td (on/off) @ 25°C | 19ns/85ns |
| Test Condition | 400V, 50A, 4.3 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
IGBT 600V 150A 625W TMAX - IGBT PT 600V 150A 625W Through Hole
IGBT Transistors APT50GP60B2DQ2G
| MOQ | Price |
|---|---|
| 1 | 15.30 € |
The manager will inform you of the total cost including delivery.