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APT50GN60BDQ2G

Manufacturer: Microsemi Corporation
REK ID: 79215
8.38 €

Technical Information

Manufacturer Microsemi Corporation 
Series 
Packaging Tube  
Part Status Active 
IGBT Type Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 107A 
Current - Collector Pulsed (Icm) 150A 
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 50A 
Power - Max 366W 
Switching Energy 1185µJ (on), 1565µJ (off) 
Input Type Standard 
Gate Charge 325nC 
Td (on/off) @ 25°C 20ns/230ns 
Test Condition 400V, 50A, 4.3 Ohm, 15V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 [B] 

Description

IGBT 600V 107A 366W TO247 - IGBT Trench Field Stop 600V 107A 366W Through Hole TO-247 [B]

IGBT Transistors APT50GN60BDQ2G

Datasheet APT50GN60BDQ2G (PDF)

Price (check the terms and price with the managers)
Available: 114 psc.
MOQPrice
8.38 € 
10 7.54 € 
25 6.87 € 
100 6.20 € 
250 5.70 € 
500 5.19 € 
1,000 4.52 € 
APT50GN60BDQ2G
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