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APT50GN120L2DQ2G

Manufacturer: Microsemi Corporation
REK ID: 80168
20.33 €

Technical Information

Manufacturer Microsemi Corporation 
Series 
Packaging Tube  
Part Status Active 
IGBT Type NPT, Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 134A 
Current - Collector Pulsed (Icm) 150A 
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A 
Power - Max 543W 
Switching Energy 4495µJ (off) 
Input Type Standard 
Gate Charge 315nC 
Td (on/off) @ 25°C 28ns/320ns 
Test Condition 800V, 50A, 2.2 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-264-3, TO-264AA 

Description

IGBT 1200V 134A 543W TO264 - IGBT NPT, Trench Field Stop 1200V 134A 543W Through Hole

IGBT Transistors APT50GN120L2DQ2G

Datasheet APT50GN120L2DQ2G (PDF)

Price (check the terms and price with the managers)
Available: 6 psc.
MOQPrice
20.33 € 
10 18.48 € 
25 17.10 € 
100 15.71 € 
250 14.33 € 
APT50GN120L2DQ2G
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