| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 113A |
| Current - Collector Pulsed (Icm) | 170A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
| Power - Max | 625W |
| Switching Energy | 900µJ (on), 905µJ (off) |
| Input Type | Standard |
| Gate Charge | 185nC |
| Td (on/off) @ 25°C | 18ns/100ns |
| Test Condition | 600V, 45A, 5 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
IGBT 1200V 113A 625W TMAX - IGBT PT 1200V 113A 625W Through Hole
IGBT Transistors APT45GP120B2DQ2G
| MOQ | Price |
|---|---|
| 1 | 23.61 € |
| 10 | 21.84 € |
| 25 | 20.07 € |
| 100 | 18.65 € |
| 250 | 17.12 € |
The manager will inform you of the total cost including delivery.