| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 20V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560pF @ 1000V |
| FET Feature | - |
| Power Dissipation (Max) | 273W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 20A, 20V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
MOSFET N-CH 1200V 41A TO247 - N-Channel 1200V 41A (Tc) 273W (Tc) Through Hole TO-247
Transistors APT40SM120B
The manager will inform you of the total cost including delivery.