| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Packaging | Tube |
| Part Status | Not For New Designs |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 101A |
| Current - Collector Pulsed (Icm) | 160A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 40A |
| Power - Max | 543W |
| Switching Energy | 795µJ (off) |
| Input Type | Standard |
| Gate Charge | 145nC |
| Td (on/off) @ 25°C | 14ns/90ns |
| Test Condition | 600V, 40A, 4.3 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
IGBT 900V 101A 543W TMAX - IGBT PT 900V 101A 543W Through Hole
IGBT Transistors APT40GP90B2DQ2G
| MOQ | Price |
|---|---|
| 1 | 18.58 € |
The manager will inform you of the total cost including delivery.