| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 65A |
| Current - Collector Pulsed (Icm) | 109A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Power - Max | 290W |
| Switching Energy | 307µJ (on), 254µJ (off) |
| Input Type | Standard |
| Gate Charge | 18nC |
| Td (on/off) @ 25°C | 16ns/122ns |
| Test Condition | 400V, 20A, 10 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
IGBT 600V 65A 290W TO-247 - IGBT PT 600V 65A 290W Through Hole TO-247 [B]
IGBT Transistors APT36GA60BD15
| MOQ | Price |
|---|---|
| 1 | 9.29 € |
| 10 | 8.36 € |
| 25 | 7.62 € |
| 100 | 6.88 € |
| 250 | 6.32 € |
| 500 | 5.76 € |
| 1,000 | 5.02 € |
The manager will inform you of the total cost including delivery.