| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 700V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 20V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1035pF @ 700V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Rds On (Max) @ Id, Vgs | 145 mOhm @ 10A, 20V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
MOSFET N-CH 700V TO247 - N-Channel 700V 35A (Tc) 176W (Tc) Through Hole TO-247
Transistors APT35SM70B
The manager will inform you of the total cost including delivery.