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APT35GP120B2DQ2G

Manufacturer: Microsemi Corporation
REK ID: 79771
23.18 €

Technical Information

Manufacturer Microsemi Corporation 
Series POWER MOS 7® 
Packaging Tube  
Part Status Active 
IGBT Type PT 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 96A 
Current - Collector Pulsed (Icm) 140A 
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A 
Power - Max 543W 
Switching Energy 750µJ (on), 680µJ (off) 
Input Type Standard 
Gate Charge 150nC 
Td (on/off) @ 25°C 16ns/95ns 
Test Condition 600V, 35A, 4.3 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 Variant 

Description

IGBT 1200V 96A 543W TMAX - IGBT PT 1200V 96A 543W Through Hole

IGBT Transistors APT35GP120B2DQ2G

Datasheet APT35GP120B2DQ2G (PDF)

Price (check the terms and price with the managers)
Available: 30 psc.
MOQPrice
23.18 € 
10 21.07 € 
25 19.49 € 
100 17.91 € 
250 16.33 € 
APT35GP120B2DQ2G
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