| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 63A |
| Current - Collector Pulsed (Icm) | 105A |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 18A |
| Power - Max | 290W |
| Switching Energy | 642µJ (on), 382µJ (off) |
| Input Type | Standard |
| Gate Charge | 84nC |
| Td (on/off) @ 25°C | 12ns/104ns |
| Test Condition | 600V, 18A, 10 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
IGBT 900V 63A 290W TO-247 - IGBT PT 900V 63A 290W Through Hole TO-247 [B]
IGBT Transistors APT35GA90B
| MOQ | Price |
|---|---|
| 1 | 5.29 € |
The manager will inform you of the total cost including delivery.