| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 64A |
| Current - Collector Pulsed (Icm) | 75A |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
| Power - Max | 357W |
| Switching Energy | 1.315mJ (on), 1.515mJ (off) |
| Input Type | Standard |
| Gate Charge | 170nC |
| Td (on/off) @ 25°C | 14ns/185ns |
| Test Condition | 800V, 25A, 4.3 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | TO-264 [L] |
IGBT 1200V 64A 357W TO264 - IGBT NPT 1200V 64A 357W Through Hole TO-264 [L]
IGBT Transistors APT33GF120LRDQ2G
The manager will inform you of the total cost including delivery.