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APT33GF120B2RDQ2G

Manufacturer: Microsemi Corporation
REK ID: 79706
20.61 €

Technical Information

Manufacturer Microsemi Corporation 
Series 
Packaging Tube  
Part Status Active 
IGBT Type NPT 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 64A 
Current - Collector Pulsed (Icm) 75A 
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A 
Power - Max 357W 
Switching Energy 1.315µJ (on), 1.515µJ (off) 
Input Type Standard 
Gate Charge 170nC 
Td (on/off) @ 25°C 14ns/185ns 
Test Condition 800V, 25A, 4.3 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 Variant 

Description

IGBT 1200V 64A 357W TMAX - IGBT NPT 1200V 64A 357W Through Hole

IGBT Transistors APT33GF120B2RDQ2G

Datasheet APT33GF120B2RDQ2G (PDF)

Price (check the terms and price with the managers)
Available: 31 psc.
MOQPrice
20.61 € 
10 18.74 € 
25 17.33 € 
100 15.93 € 
250 14.52 € 
APT33GF120B2RDQ2G
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