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APT30GP60BDQ1G

Manufacturer: Microsemi Corporation
REK ID: 80061
12.46 €

Technical Information

Manufacturer Microsemi Corporation 
Series POWER MOS 7® 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type PT 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 100A 
Current - Collector Pulsed (Icm) 120A 
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A 
Power - Max 463W 
Switching Energy 260µJ (on), 250µJ (off) 
Input Type Standard 
Gate Charge 90nC 
Td (on/off) @ 25°C 13ns/55ns 
Test Condition 400V, 30A, 5 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 [B] 

Description

IGBT 600V 100A 463W TO247 - IGBT PT 600V 100A 463W Through Hole TO-247 [B]

IGBT Transistors APT30GP60BDQ1G

Datasheet APT30GP60BDQ1G (PDF)

Price (check the terms and price with the managers)
Available: 1 psc.
MOQPrice
12.46 € 
10 11.22 € 
25 10.22 € 
100 9.23 € 
250 8.48 € 
500 7.73 € 
APT30GP60BDQ1G
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