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APT30GN60BDQ2G

Manufacturer: Microsemi Corporation
REK ID: 80877
5.25 €

Technical Information

Manufacturer Microsemi Corporation 
Series 
Packaging Tube  
Part Status Active 
IGBT Type Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 63A 
Current - Collector Pulsed (Icm) 90A 
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A 
Power - Max 203W 
Switching Energy 525µJ (on), 700µJ (off) 
Input Type Standard 
Gate Charge 165nC 
Td (on/off) @ 25°C 12ns/155ns 
Test Condition 400V, 30A, 4.3 Ohm, 15V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 [B] 

Description

IGBT 600V 63A 203W TO247 - IGBT Trench Field Stop 600V 63A 203W Through Hole TO-247 [B]

IGBT Transistors APT30GN60BDQ2G

Datasheet APT30GN60BDQ2G (PDF)

Price (check the terms and price with the managers)
Available: 13 psc.
MOQPrice
5.25 € 
APT30GN60BDQ2G
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