| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Rds On (Max) @ Id, Vgs | 175 mOhm @ 10A, 20V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | D3 |
| Package / Case | D-3 Module |
POWER MOSFET - SIC - N-Channel 1200V 25A (Tc) 175W (Tc) Chassis Mount D3
Transistors APT25SM120S
The manager will inform you of the total cost including delivery.