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APT25GR120BSCD10

Manufacturer: Microsemi Corporation
REK ID: 82407

Technical Information

Manufacturer Microsemi Corporation 
Series 
Packaging Tube  
Part Status Obsolete 
IGBT Type NPT 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 75A 
Current - Collector Pulsed (Icm) 100A 
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A 
Power - Max 521W 
Switching Energy 434µJ (on), 466µJ (off) 
Input Type Standard 
Gate Charge 203nC 
Td (on/off) @ 25°C 16ns/122ns 
Test Condition 600V, 25A, 4.3 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 

Description

IGBT 1200V 75A 521W TO247 - IGBT NPT 1200V 75A 521W Through Hole TO-247

IGBT Transistors APT25GR120BSCD10

Datasheet APT25GR120BSCD10 (PDF)

Price (check the terms and price with the managers)
Available: 1 psc.
Price available upon request
APT25GR120BSCD10
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