Manufacturer | Microsemi Corporation |
Series | - |
Packaging | Tube |
Part Status | Obsolete |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 75A |
Current - Collector Pulsed (Icm) | 100A |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
Power - Max | 521W |
Switching Energy | 434µJ (on), 466µJ (off) |
Input Type | Standard |
Gate Charge | 203nC |
Td (on/off) @ 25°C | 16ns/122ns |
Test Condition | 600V, 25A, 4.3 Ohm, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
IGBT 1200V 75A 521W TO247 - IGBT NPT 1200V 75A 521W Through Hole TO-247
IGBT Transistors APT25GR120BSCD10
The manager will inform you of the total cost including delivery.