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APT25GP90BG

Manufacturer: Microsemi Corporation
REK ID: 81116
9.54 €

Technical Information

Manufacturer Microsemi Corporation 
Series POWER MOS 7® 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type PT 
Voltage - Collector Emitter Breakdown (Max) 900V 
Current - Collector (Ic) (Max) 72A 
Current - Collector Pulsed (Icm) 110A 
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 25A 
Power - Max 417W 
Switching Energy 370µJ (off) 
Input Type Standard 
Gate Charge 110nC 
Td (on/off) @ 25°C 13ns/55ns 
Test Condition 600V, 25A, 5 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 [B] 

Description

IGBT 900V 72A 417W TO247 - IGBT PT 900V 72A 417W Through Hole TO-247 [B]

IGBT Transistors APT25GP90BG

Datasheet APT25GP90BG (PDF)

Price (check the terms and price with the managers)
Available: 12 psc.
MOQPrice
9.54 € 
APT25GP90BG
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