| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Packaging | Tube |
| Part Status | Not For New Designs |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 72A |
| Current - Collector Pulsed (Icm) | 110A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
| Power - Max | 417W |
| Switching Energy | 370µJ (off) |
| Input Type | Standard |
| Gate Charge | 110nC |
| Td (on/off) @ 25°C | 13ns/55ns |
| Test Condition | 600V, 40A, 4.3 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
IGBT 900V 72A 417W TO247 - IGBT PT 900V 72A 417W Through Hole TO-247 [B]
IGBT Transistors APT25GP90BDQ1G
| MOQ | Price |
|---|---|
| 1 | 10.39 € |
The manager will inform you of the total cost including delivery.