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APT25GN120B2DQ2G

Manufacturer: Microsemi Corporation
REK ID: 81139
10.55 €

Technical Information

Manufacturer Microsemi Corporation 
Series 
Packaging Tube  
Part Status Active 
IGBT Type NPT, Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 67A 
Current - Collector Pulsed (Icm) 75A 
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A 
Power - Max 272W 
Switching Energy 2.15µJ (off) 
Input Type Standard 
Gate Charge 155nC 
Td (on/off) @ 25°C 22ns/280ns 
Test Condition 800V, 25A, 4.3 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 Variant 

Description

IGBT 1200V 67A 272W TMAX - IGBT NPT, Trench Field Stop 1200V 67A 272W Through Hole

IGBT Transistors APT25GN120B2DQ2G

Datasheet APT25GN120B2DQ2G (PDF)

Price (check the terms and price with the managers)
Available: 9 psc.
MOQPrice
10.55 € 
APT25GN120B2DQ2G
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