| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 32A |
| Current - Collector Pulsed (Icm) | 64A |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 15A |
| Power - Max | 200W |
| Switching Energy | 2.7mJ |
| Input Type | Standard |
| Gate Charge | 95nC |
| Td (on/off) @ 25°C | 17ns/105ns |
| Test Condition | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
IGBT 1200V 32A 200W TO247 - IGBT NPT 1200V 32A 200W Through Hole TO-247 [B]
IGBT Transistors APT20GF120BRG
The manager will inform you of the total cost including delivery.