| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 36A |
| Current - Collector Pulsed (Icm) | 64A |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 15A |
| Power - Max | 200W |
| Switching Energy | 895µJ (on), 840µJ (off) |
| Input Type | Standard |
| Gate Charge | 100nC |
| Td (on/off) @ 25°C | 10ns/120ns |
| Test Condition | 800V, 15A, 4.3 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
IGBT 1200V 36A 200W TO247 - IGBT NPT 1200V 36A 200W Through Hole TO-247 [B]
IGBT Transistors APT20GF120BRDQ1G
The manager will inform you of the total cost including delivery.