| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 335W (Tc) |
| Rds On (Max) @ Id, Vgs | 370 mOhm @ 9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D3Pak |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
MOSFET N-CH 600V 19A D3PAK - N-Channel 600V 19A (Tc) 335W (Tc) Surface Mount D3Pak
Transistors APT18F60S
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