| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Packaging | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4420pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 565W (Tc) |
| Rds On (Max) @ Id, Vgs | 670 mOhm @ 9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | T-MAX™ [B2] |
| Package / Case | TO-247-3 Variant |
MOSFET N-CH 1200V 18A T-MAX - N-Channel 1200V 18A (Tc) 565W (Tc) Through Hole T-MAX™ [B2]
Transistors APT12067B2LLG
The manager will inform you of the total cost including delivery.