Manufacturer | Microsemi Corporation |
Series | - |
Packaging | Tube |
Part Status | Obsolete |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 25A |
Current - Collector Pulsed (Icm) | 24A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 8A |
Power - Max | 156W |
Switching Energy | 300µJ (on), 285µJ (off) |
Input Type | Standard |
Gate Charge | 65nC |
Td (on/off) @ 25°C | 7ns/100ns |
Test Condition | 800V, 8A, 10 Ohm, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 [B] |
IGBT 1200V 25A 156W TO247 - IGBT NPT 1200V 25A 156W Through Hole TO-247 [B]
IGBT Transistors APT11GF120BRDQ1G
The manager will inform you of the total cost including delivery.