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APT11GF120BRDQ1G

Manufacturer: Microsemi Corporation
REK ID: 81773

Technical Information

Manufacturer Microsemi Corporation 
Series 
Packaging Tube  
Part Status Obsolete 
IGBT Type NPT 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 25A 
Current - Collector Pulsed (Icm) 24A 
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 8A 
Power - Max 156W 
Switching Energy 300µJ (on), 285µJ (off) 
Input Type Standard 
Gate Charge 65nC 
Td (on/off) @ 25°C 7ns/100ns 
Test Condition 800V, 8A, 10 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 [B] 

Description

IGBT 1200V 25A 156W TO247 - IGBT NPT 1200V 25A 156W Through Hole TO-247 [B]

IGBT Transistors APT11GF120BRDQ1G

Datasheet APT11GF120BRDQ1G (PDF)

Price (check the terms and price with the managers)
Available: 7 psc.
Price available upon request
APT11GF120BRDQ1G
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