| Manufacturer | Microsemi Corporation |
| Series | POWER MOS V® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 225A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 1050nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 21600pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | ISOTOP® |
| Package / Case | SOT-227-4, miniBLOC |
MOSFET N-CH 100V 225A ISOTOP - N-Channel 100V 225A (Tc) 700W (Tc) Chassis Mount ISOTOP®
Transistors APT10M07JVR
The manager will inform you of the total cost including delivery.