| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Packaging | Tube |
| Part Status | Obsolete |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 183A |
| Current - Collector Pulsed (Icm) | 307A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 62A |
| Power - Max | 780W |
| Switching Energy | 1.354mJ (on), 1.614mJ (off) |
| Input Type | Standard |
| Gate Charge | 294nC |
| Td (on/off) @ 25°C | 28ns/212ns |
| Test Condition | 400V, 62A, 4.7 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
IGBT 600V 183A 780W TO247 - IGBT PT 600V 183A 780W Through Hole
IGBT Transistors APT102GA60B2
The manager will inform you of the total cost including delivery.