| Manufacturer | Microsemi Corporation |
| Series | POWER MOS IV® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 5.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD |
| Package / Case | TO-247-3 |
MOSFET N-CH 1000V 11A TO247AD - N-Channel 1000V 11A (Tc) 310W (Tc) Through Hole TO-247AD
Transistors APT1001RBN
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