Manufacturer | Alpha & Omega Semiconductor Inc. |
Series | - |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1954pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 28W (Tc) |
Rds On (Max) @ Id, Vgs | 520 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262F |
Package / Case | TO-262-3 Full Pack, I²Pak |
MOSFET N-CH 600V 12A TO262F - N-Channel 600V 12A (Tc) 28W (Tc) Through Hole TO-262F
Transistors AOWF12T60
The manager will inform you of the total cost including delivery.