Manufacturer | Alpha & Omega Semiconductor Inc. |
Series | - |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 33V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Ta), 79W (Tc) |
Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
MOSFET N-CH 33V 9A TO220 - N-Channel 33V 9A (Ta), 60A (Tc) 1.9W (Ta), 79W (Tc) Through Hole TO-220
Transistors AOT502
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