| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Series | - |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Rds On (Max) @ Id, Vgs | 720 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
MOSFET N-CH 30V TO220 - N-Channel 650V 12A (Tc) 278W (Tc) Through Hole TO-220
Transistors AOT12N65_001
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