| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4520pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
MOSFET N-CH TO-220AB - N-Channel 60V 160A (Tc) 230W (Tc) Through Hole
Transistors 64-0055PBF
The manager will inform you of the total cost including delivery.