Manufacturer | Infineon Technologies |
Series | - |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2W |
Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | - |
MOSFET 2N-CH 20V 10A/12A 8-SOIC - N-Channel 20V 10A (Ta), 12A (Tc) 2W Surface Mount
Transistors 62-0095PBF
The manager will inform you of the total cost including delivery.