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3N163-E3

Manufacturer: Vishay Siliconix
REK ID: 134900

Technical Information

Manufacturer Vishay Siliconix 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 50mA (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 20V 
Vgs(th) (Max) @ Id 5V @ 10µA 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 15V 
FET Feature 
Power Dissipation (Max) 375mW (Ta) 
Rds On (Max) @ Id, Vgs 250 Ohm @ 100µA, 20V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-72 
Package / Case TO-206AF, TO-72-4 Metal Can 

Description

MOSFET P-CH 40V 50MA TO-72 - P-Channel 40V 50mA (Ta) 375mW (Ta) Through Hole TO-72

Transistors 3N163-E3

Datasheet 3N163-E3 (PDF)

Price (check the terms and price with the managers)
Available: 17 psc.
Price available upon request
3N163-E3
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