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2SK4150TZ-E

Manufacturer: Renesas Electronics America
REK ID: 134328

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 250V 
Current - Continuous Drain (Id) @ 25°C 400mA (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4V 
Vgs (Max) ±10V 
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 25V 
FET Feature 
Power Dissipation (Max) 750mW (Ta) 
Rds On (Max) @ Id, Vgs 5.7 Ohm @ 200mA, 4V 
Operating Temperature 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-92 
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 

Description

MOSFET N-CH 250V 0.4A TO-92 - N-Channel 250V 400mA (Ta) 750mW (Ta) Through Hole TO-92

Transistors 2SK4150TZ-E

Datasheet 2SK4150TZ-E (PDF)

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Available: 5 psc.
Price available upon request
2SK4150TZ-E
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