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2SK4099LS-1E

Manufacturer: ON Semiconductor
REK ID: 135052

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 6.9A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 30V 
FET Feature 
Power Dissipation (Max) 2W (Ta), 35W (Tc) 
Rds On (Max) @ Id, Vgs 940 mOhm @ 4A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220F-3FS 
Package / Case TO-220-3 Full Pack 

Description

MOSFET N-CH 600V 8.5A - N-Channel 600V 6.9A (Tc) 2W (Ta), 35W (Tc) Through Hole TO-220F-3FS

Transistors 2SK4099LS-1E

Datasheet 2SK4099LS-1E (PDF)

Price (check the terms and price with the managers)
Available: 13 psc.
Price available upon request
2SK4099LS-1E
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