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2SK3821-E

Manufacturer: ON Semiconductor
REK ID: 133266

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Bulk  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 40A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 
Vgs(th) (Max) @ Id 2.6V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V 
FET Feature 
Power Dissipation (Max) 1.65W (Ta), 65W (Tc) 
Rds On (Max) @ Id, Vgs 33 mOhm @ 20A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package SMP 
Package / Case TO-220-3, Short Tab 

Description

MOSFET N-CH 100V 40A SMP - N-Channel 100V 40A (Ta) 1.65W (Ta), 65W (Tc) Through Hole SMP

Transistors 2SK3821-E

Datasheet 2SK3821-E (PDF)

Price (check the terms and price with the managers)
Available: 17 psc.
Price available upon request
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