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2SK3820-DL-1E

Manufacturer: ON Semiconductor
REK ID: 135045

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 26A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 20V 
FET Feature 
Power Dissipation (Max) 1.65W (Ta), 50W (Tc) 
Rds On (Max) @ Id, Vgs 60 mOhm @ 13A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-263-2 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET N-CH 100V 26A - N-Channel 100V 26A (Ta) 1.65W (Ta), 50W (Tc) Surface Mount TO-263-2

Transistors 2SK3820-DL-1E

Datasheet 2SK3820-DL-1E (PDF)

Price (check the terms and price with the managers)
Available: 7 psc.
Price available upon request
2SK3820-DL-1E
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