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2SK3430-Z-E1-AZ

Manufacturer: Renesas Electronics America
REK ID: 135443

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tube  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 10V 
FET Feature 
Power Dissipation (Max) 1.5W (Ta), 84W (Tc) 
Rds On (Max) @ Id, Vgs 7.3 mOhm @ 40A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220AB 
Package / Case TO-220-3 

Description

MOSFET N-CH 40V 80A TO220AB - N-Channel 40V 80A (Tc) 1.5W (Ta), 84W (Tc) Through Hole TO-220AB

Transistors 2SK3430-Z-E1-AZ

Datasheet 2SK3430-Z-E1-AZ (PDF)

Price (check the terms and price with the managers)
Available: 6 psc.
Price available upon request
2SK3430-Z-E1-AZ
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