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2SJ687-ZK-E1-AY

Manufacturer: Renesas Electronics America
REK ID: 133133

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V 
Vgs (Max) ±12V 
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 10V 
FET Feature 
Power Dissipation (Max) 1W (Ta), 36W (Tc) 
Rds On (Max) @ Id, Vgs 7 mOhm @ 10A, 4.5V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-252 (MP-3ZK) 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET P-CH 20V 20A TO-252 - P-Channel 20V 20A (Tc) 1W (Ta), 36W (Tc) Surface Mount TO-252 (MP-3ZK)

Transistors 2SJ687-ZK-E1-AY

Datasheet 2SJ687-ZK-E1-AY (PDF)

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Available: 14 psc.
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2SJ687-ZK-E1-AY
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