| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Rds On (Max) @ Id, Vgs | 170 mOhm @ 2.5A, 10V |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | PW-MOLD |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET P-CHANNEL 60V 5A PW-MOLD - P-Channel 60V 5A (Ta) 20W (Tc) Surface Mount PW-MOLD
Transistors 2SJ668(TE16L1,NQ)
The manager will inform you of the total cost including delivery.